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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices
Plastic Medium-Power Complementary Silicon Transistors
Designed for general-purpose amplifier and low-speed switching applications.
Features
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* High DC Current Gain - *
hFE = 2500 (Typ) @ IC = 1.0 Adc Collector-Emitter Sustaining Voltage - @ 30 mAdc VCEO(sus) = 60 Vdc (Min) - TIP110, TIP115 = 80 Vdc (Min) - TIP111, TIP116 = 100 Vdc (Min) - TIP112, TIP117 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built-in Base-Emitter Shunt Resistors Pb-Free Packages are Available*
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 50 WATTS
MARKING DIAGRAM
4
* * *
1
TO-220AB CASE 221A STYLE 1 2 3
TIP11xG AYWW
TIP11x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
1
September, 2005 - Rev. 5
Publication Order Number: TIP110/D
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
IIII I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP110, TIP115 60 60 TIP111, TIP116 80 80 TIP112, TIP117 100 100 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 2.0 4.0 50 Collector Current - Continuous - Peak Base Current mAdc W W/_C W W/_C mJ _C Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD E 50 0.4 2.0 0.016 25 Unclamped Inductive Load Energy - Figure 13 Operating and Storage Junction TJ, Tstg - 65 to + 150
THERMAL CHARACTERISTICS
Characteristics
Symbol RqJC RqJA
Max 2.5
Unit
Thermal Resistance, Junction-to-Case
_C/W _C/W
Thermal Resistance, Junction-to-Ambient
62.5
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device TIP110 TIP110G TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G TIP117 TIP117G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail
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PD, POWER DISSIPATION (WATTS)
II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
OFF CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Small-Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Base-Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0)
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
Characteristic
1.0 20
2.0 40
3.0 60
TA TC
0
0
0
20
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Figure 1. Power Derating
TIP115, TIP116, TIP117 TIP110, TIP111, TIP112
60 80 100 T, TEMPERATURE (C)
3 TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 TIP110, TIP115 TIP111, TIP116 TIP112 ,TIP117 TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 TA TC 120 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO Cob hFE 140 hfe 160 1000 500 Min 60 80 100 25 - - - - - - - - - - - Max 200 100 2.8 2.5 2.0 1.0 1.0 1.0 2.0 2.0 2.0 - - - - - - mAdc mAdc mAdc Unit Vdc Vdc Vdc pF - -
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
4.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA
TUT V2 approx +8.0 V 0 V1 approx -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 ms
for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses.
VCC -30 V
ts 2.0
SCOPE
VCC = 30 V IC/IB = 250
IB1 = IB2 TJ = 25C
t, TIME ( s)
1.0 0.8 0.6 0.4 PNP NPN 0.1
tf tr
8.0 k
60
td @ VBE(off) = 0
0.2 0.04 0.06
0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1
D = 0.5
0.2 0.1 0.05 0.02 0.01 0.02 P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k
0.07 0.05 0.03
0.02 0.01 0.01
SINGLE PULSE 0.05 0.1
Figure 4. Thermal Response
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE-REGION SAFE-OPERATING AREA
10 IC, COLLECTOR CURRENT (AMPS) 4.0 1 ms 2.0 1.0 5 ms TJ = 150C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 1.0 TIP115 TIP116 TIP117 IC, COLLECTOR CURRENT (AMPS) 10 4.0 2.0 1.0 TJ = 150C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 1.0 TIP110 TIP111 TIP112
10 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. TIP115, 116, 117
Figure 6. TIP110, 111, 112
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
200 TC = 25C C, CAPACITANCE (pF) 100 70 50 Cob 30 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Cib
Figure 7. Capacitance
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN TIP110, 111, 112
6.0 k 4.0 k hFE , DC CURRENT GAIN 3.0 k 2.0 k 25C -55 C 1.0 k 800 600 400 300 0.04 0.06 TJ = 125C VCE = 3.0 V hFE , DC CURRENT GAIN 6.0 k 4.0 k 3.0 k 25C 2.0 k -55 C 1.0 k 800 600 400 300 0.04 0.06 TJ = 125C VCE = 3.0 V
PNP TIP115, 116, 117
0.1
0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP)
2.0
4.0
0.1
0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 IC = 0.5 A TJ = 25C 1.0 A 2.0 A 4.0 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 IC = 0.5 A 1.0 A 2.0 A 4.0 A TJ = 25C
0.2
0.5
1.0 2.0 5.0 10 IB, BASE CURRENT (mA)
20
50
100
0.2
0.5
1.0 2.0 5.0 10 IB, BASE CURRENT (mA)
20
50
100
Figure 9. Collector Saturation Region
2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250
2.2 TJ = 25C 1.8 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V
1.4
VBE @ VCE = 3.0 V
1.0 VCE(sat) @ IC/IB = 250 0.6
1.0 VCE(sat) @ IC/IB = 250 0.6
0.2 0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.2 0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. "On" Voltages
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN TIP110, 111, 112
V, TEMPERATURE COEFFICIENTS (mV/C) *APPLIES FOR IC/IB hFE/3 0 -0.8 -1.6 -2.4 -3.2 qVC for VBE -4.0 -4.8 0.04 0.06 0.1 0.2 0.4 0.6 * qVC for VCE(sat) -55 C to 25C 25C to 150C -55 C to 25C 1.0 2.0 4.0 25C to 150C V, TEMPERATURE COEFFICIENTS (mV/C) +0.8 +0.8 *APPLIES FOR IC/IB hFE/3 0 -0.8 -1.6 -2.4 -3.2 -4.0 qVC for VBE * qVC for VCE(sat) -55 C to 25C 25C to 150C -55 C to 25C 25C to 150C
PNP TIP115, 116, 117
-4.8 0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C REVERSE FORWARD
105 REVERSE 104 103 102 101 100 TJ = 150C 100C 25C -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 VCE = 30 V FORWARD
VCE = 30 V
25C 10-1 -0.6 -0.4 -0.2
0
+0.2
+0.4 +0.6 +0.8 +1.0
+1.2 +1.4
10-1 -0.6 -0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TEST CIRCUIT
Figure 12. Collector Cut-Off Region VOLTAGE AND CURRENT WAVEFORMS
VCE MONITOR INPUT VOLTAGE tw 3.5 ms (SEE NOTE A) 0V -5 V 100 ms VCC = 20 V IC MONITOR COLLECTOR CURRENT 0.71 A 0V VCER
INPUT 50 W
MJE254
RBB1 2 kW
100 mH TUT + - RS = 0.1 W COLLECTOR VOLTAGE
50 W VBB1 = 10 V + -
RBB2 100 W VBB2 = 0
Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test reverse all polarity and use MJE224 driver.
20 V VCE(sat)
Figure 13. Inductive Load Switching
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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